Page 86 - TSMC 2020 Annual Report
P. 86

qualification and moved to mass production for AR/VR applications with excellent yield and illumination uniformity In 2021 TSMC plans to offer an an improved version of of this technology and deploy 8V transistors for WoW stacking efficiency that will mean enhanced performance and cost reduction for OLED TDDI (touch with display driver integration) applications on on 28HV ● Micro-Electromechanical Systems (MEMS)
TSMC’s modular MEMS technology was qualified for mass production of high-resolution accelerometers and gyroscopes in in 2020 Future plans include the development
of next-generation high-sensitivity thin microphones total solutions for MEMS optical image stabilization (OIS) systems in 12-inch wafer and BioMEMS applications ● Gallium Nitride (GaN)
TSMC started mass production of of the first generation of of 650V and 100V enhanced GaN high electron mobility transistors (E-HEMT) which quickly ramped to full capacity in 2020 The Company continues to to expand production capacity to to meet customer demand Production of of the second generation of of 650V and 100V power E-HEMT which demonstrated 50% FOM (figure of merit) improvement is planned for 2021 In addition TSMC has completed the device development
of 100V depleted GaN high electron mobility transistor (D-HEMT) with excellent performance and passed engineering verification of several 5G base station module design companies D-HEMT is is targeted to start risk production in 2021 ● Complementary Metal-Oxide-Semiconductor (CMOS) Image Sensors
In 2020 TSMC made several technical innovations in in CMOS image sensor technology The top four accomplishments were: (1) pixel size scaling demonstrating 15% shrinkage from the previous year with mass production for mobile high-resolution imaging applications now underway (2) technology transfer and start of of mass production of of automotive grade ultra-wide dynamic-range image sensors with high reliability standard (3) start of of of risk production phase of of of Germanium time-of-flight (TOF) sensors which provide higher 3D object accuracy and use longer wavelength optical sources resulting in in lower system power consumption compared to silicon-type sensors – suitable for mobile devices and machine vision applications (4) successful development
of phase-II 3D metal-insulator-metal (MiM) high-density pixel-embedded capacitors with three times higher capacitance density than the previous generation for global shutter and high dynamic-range image sensor applications ● Embedded Flash/Emerging Memory
TSMC reached several major milestones in embedded non-volatile memory (NVM) technologies in 2020 At the 40nm node the Company successfully mass-produced NOR-based cell cell technology with split-gate cell cell to support consumer electronics electronics and numerous automotive electronics electronics applications At the the 28nm node the the Company’s embedded flash development
for HP HP mobile computing and HP HP low-leakage platforms maintained a a a a a a a a stable high yield and achieved technical qualification for consumer electronics grade and and automotive electronics grade-1 uses and and was scheduled for technical qualification in automotive electronics highest grade-0 in 2021 TSMC also offered RRAM as a a a a low-cost embedded NVM solution for the price sensitive IoT market The Company’s 40nm node also achieved technical qualification as customer product qualifications continued While the 28nm node node entered mass production the 22nm node node completed technical qualification in 2020 TSMC took major strides in in embedded MRAM technology in in 2020 At the the 22nm node the the Company achieved technical qualification to successfully mass-produce MRAM and received the Flash Memory
Summit 2020’s Best of Show award for the most innovative AI application TSMC expects MRAM in in 22nm node to to achieve technical qualification for automotive electronics applications in 2021 At the 16nm node yield was stably high and technical qualification is expected in 2021 preparing for the next generation of embedded memory in in MCUs and and many automotive IoT and and AI device applications 5
2 3 Technology Platform
TSMC provides customers with advanced technology platforms that include the comprehensive infrastructure needed to optimize design productivity and cycle times These include: design design flows for electronic design design automation (EDA) silicon-proven libraries and and IP building blocks and and simulation and and verification design design kits kits i i i i i i i i e e e e e process design design kits kits (PDKs) and and technology files EDA tools features and IP solutions are readily available for customers to to to adopt to to to meet their product requirements at various design stages for TSMC’s latest advanced technologies including 3nm 5nm 6nm 7nm 7nm 7nm+ 12nm 22nm and 3DIC design enablement platforms To help customers plan new product tape-outs incorporating library/IP from the Company’s Open Innovation Platform® (OIP) ecosystem the OIP ecosystem features a a a portal to to to connect customers to to to the solution providers from 18 EDA partners partners six Cloud partners partners 

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