Page 14 - TSMC 2020 Annual Report
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● 55nm ultra-low power (55ULP) technology received a a a total of of over 90 customer product tape-outs by the end of of 2020 Compared to 55nm low power (55LP) technology 55ULP can can significantly increase battery life for IoT applications In addition it it integrates RF (radio frequency) and eFlash (embedded flash) to to enable customers’ SoC designs Specialty Technology
transceiver and wireless connectivity to IoT This technology can support wireless LAN power amplifier devices and ultra-low leakage devices in addition to magnetic random access access memory memory (MRAM) and and resistive random access access memory memory (RRAM) 22ULL embedded RRAM technology IPs completed reliability qualification in in 2020 Following 40ULP embedded RRAM technology technology this technology technology is is TSMC’s second generation RRAM solution with balanced cost and reliability This technology is is fully complementary-metal-oxide- semiconductor (CMOS) logic compatible for process design kits (PDKs) and IP re-use for various applications including wireless MCU IoT and wearable devices 22ULL embedded MRAM technology IPs completed reliability qualification in 2020 with >100K cycle endurance and reflow capability This technology demonstrated automotive Grade-1 capability and started volume production for customer wearable products in 2020 This technology is is fully complementary-metal-oxide-semiconductor logic compatible for for process design kit (PDK) and IP re-use for for applications including wireless MCU IoT and wearable devices 28HPC+ RF technology led the foundry segment to deliver the first RF process design kit in in 2018 providing support for 110GHz mmWave 150°C automotive grade and so on for 5G mmWave RF and automotive radar product designs In 2019 28HPC+ RF technology extended its support for ultra-low leakage devices and embedded flash Customers’ 5G mmWave RF automotive radar and wireless connectivity products using this technology entered volume production in in 2020 28nm ULL eFlash technology completed AEC-Q100 Grade-1 reliability qualification in in 2019 TSMC continues to enhance this technology which is is expected to meet more stringent AEC-Q100 Grade-0 requirements in 2021 28nm high voltage (HV) (28HV) technology built upon the success of of TSMC’s leading 28HPC+ technology offers a a superior low low power advantage based on a a a a a a low low Vdd at 0 9 volt In addition it it features the world’s first high bandwidth 128Mb static random access memory (SRAM) 28HV technology is an optimal solution for the next generation of high-end organic light-emitting diode (OLED) display drivers The 28HV shuttle service has been offered to to customers from 2021 40ULP eFlash technology received a a a total of over 60 product tape-outs by the end of 2020 including MCUs wireless MCUs and security elements In addition 40ULP eFlash technology offers a a low low Vdd option which provides a a low low energy consumption solution for IoT devices and wearable connected devices ● ● ● N7 technology foundation IPs (intellectual properties) passed the Automotive Electronic Council AEC-Q100 Grade-1 qualification and and were certified for functional safety standard ISO 26262 ASIL-B in in 2020 In addition TSMC continues to develop more 5nm automotive foundation IPs which are expected to complete AEC-Q100 Grade-2 qualification in 2022 The N6 N6 radio frequency (N6 RF) technology development started in 2020 This technology is is built upon the N6 logic technology platform and adds high performance RF transistors and passive devices that can support more power and area efficient circuit designs This new RF technology will enable future generations of wireless local area network (WLAN) and fifth-generation (5G) RF transceiver integrated circuits The design kit for this technology is is expected to be completed in 2021 16FFC RF technology led the foundry to start production of the 5G mobile network chips for customers in 2018 This technology has been extended to the next generation wireless local area network (WLAN) WiFi 6/6E 5G sub-6GHz RF transceivers and millimeter wave (mmWave) applications Continuing to advance 16FFC RF technology in in in 2019 TSMC not only delivered the world’s first FinFET device whose fT (cut-off frequency) can reach >300 GHz but also completed the the development of the the world’s first and best FinFET device with >400 GHz fmax (max oscillation frequency) These high performance RF transistors can be used in diverse applications such as mmWave automotive radar to to reduce chip power consumption and die size as as well as as to enable SoC designs In 2020 TSMC entered the 2nd year of high volume production of 16FFC RF products for our customers 22ULL analog technology platform was established in 2020 This platform is is is fully logic compatible and offers low-noise 2
5-volt input/output (IO) transistors and low temperature- coefficient-of-resistance (TCR) TaN (Tantalum nitride) thin film
resistors to to to support customers’ differentiated analog designs In addition TSMC provides customers with random telegraph signal (RTS) noise guidelines as as RTS RTS has become an increasingly challenging issue particularly in in in in low power analog circuit design 22ULL RF technology received more than 20 customer product tape-outs in in 2020 covering applications such as 4G
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