Page 13 - TSMC 2020 Annual Report

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● ● ● development of N4 is on schedule with good progress and volume production is expected to start in 2022 5nm FinFET (N5) technology is currently TSMC’s most advanced technology that leads the world in volume production Products using this technology from various customers entered volume production in 2020 for applications including mobile and high performance computing products 5nm FinFET Plus (N5P) technology is a a performance- enhanced version of N5 technology with same design rules N5P technology provides about 20% faster speed than N7 technology or about 40% power reduction TSMC
received multiple customer tape-outs by the end of 2020 and expects to start N5P technology volume production in 2021 6nm FinFET (N6) technology successfully entered risk production in the first quarter of 2020 as planned 6nm uses extreme ultraviolet (EUV) lithography technology to replace conventional immersion layers for better yield and shorter cycle time The design rules of N6 technology are completely compatible with its 7nm FinFET (N7) predecessor and this technology offers a a a a new standard cell with nearly 18% logic density improvement TSMC
has received more than 20 N6 product tape-outs Due to the easy porting capability from N7 design many customers’ products already entered volume production in in 2020 while meeting customers’ expectations for both product quality and yield It is expected the majority of N7 technology technology customers will migrate to to N6 technology technology in coming years N7 technology is one of TSMC’s fastest technologies in terms of time to volume production and provides optimized manufacturing processes for both mobile computing applications and high performance computing components Following its volume production in in April 2018 this technology produced more than one billion fully functional and defect-free chips in in total in in August 2020 for well over 100 customer products TSMC’s large-scale capacity advantage and efficient manufacturing capability mean more than merely producing a a a a large amount of chips quickly These also help improve quality and and reliability and and facilitate technology advancement In addition 7nm FinFET plus (N7+) has been in in volume production since 2019 which was the first commercially available EUV foundry process technology in the the world Its success has paved the the way for N6 N5 and future advanced technologies 16nm/12nm technology family received a a a total of over 650 customer product tape-outs by the end of 2020 for different product applications including mobile phone high performance computing storage and consumer electronics 12nm FinFET compact plus (12FFC+) technology shares
the same design rules as 12nm FinFET compact (12FFC) technology technology to to to help customers migrate to to to 12FFC+ technology technology quickly Compared to 12FFC technology technology this technology technology provides about an additional 5% speed improvement or 10% power reduction 12FFC+ technology entered risk production in in 2019 and started volume production in in 2020 as planned In addition TSMC
introduced N12eTM technology in in 2020 bringing TSMC’s world-class FinFET transistor technology to AI-enabled Internet of Things and other high efficiency high performance edge devices N12eTM technology leverages TSMC’s 12FFC+ baseline and and IP ecosystem and and offers industry-leading low low operating voltage (low Vdd) and excellent low low leakage leakage performance of ultra-low-leakage (ULL) SRAM (static random access memory) and and new ultra-low leakage devices 22nm ultra-low leakage (22ULL) technology began volume production in 2019 to support IoT and wearable devices applications In addition 22ULL low Vdd solutions were ready in 2019 Compared to 40ULP and 55ULP technologies 22ULL technology offers new ULL ULL ULL device ULL ULL ULL SRAM and low low Vdd solutions to significantly lower power consumption Moreover new enhanced analog devices were available in 2020 to to further enrich the the 22ULL platform to to support customers for broader applications 22nm ULP ULP (22ULP) technology was developed based on TSMC’s industry-leading 28nm technology and received a a a a total of of more than 60 product tape-outs by the end of of 2020 Compared to 28nm high performance compact plus (28HPC+) technology 22ULP provides 10% area reduction with 10% speed gain or or 20% power reduction for many applications including image processing digital TVs set-top boxes smartphones and consumer products 28HPC+ technology accumulated more than 350 customer product tape-outs by the end of 2020 28HPC+ technology provides further performance enhancement or or power reduction in in mainstream smartphone digital TV storage audio and SoC (System-on-Chip) applications Compared to 28HPC 28HPC technology technology 28HPC+ technology technology improves performance by by about about 15% or or reduces leakage by by about about 50% 40nm ULP ULP (40ULP) technology received a a total of over 150 product tape-outs by the end of 2020 This technology supports a a a a a a a variety of IoT and wearable devices applications including wireless connectivity wearable application processors and micro control units (MCUs) In addition TSMC
uses its leading 40ULP low Vdd solution for IoT and wearable devices devices Newly enhanced analog devices devices are available which enrich the 40ULP platform to to support customers for for broader analog design needs in the future ● ● ● ● ● ●