Page 13 - TSMC 2019 Annual Report

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Specialty Technology
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28HPC+ RF technology led the the foundry segment to deliver the the first RF process design kit (PDK) in in 2018 providing support for 110GHz mmWave 150°C automotive grade and so on for 5G mmWave RF and automotive radar product designs In 2019 28HPC+RF technology extended its support for ultra-low leakage devices and embedded flash Customer products of 5G mmWave RF and automotive radar are already in volume production 28nm ULL eFlash technology completed AEC-Q100 Grade-1 reliability qualification in in 2019 TSMC continues to enhance this technology which is is expected to meet more stringent AEC-Q100 Grade-0 requirements in 2020 40ULP eFlash technology received over 40 40 product tape-outs by the end of 2019 including MCUs MCUs wireless MCUs MCUs and security elements 40ULP eFlash technology also offered a a a low Vdd option which provides low energy consumption solutions for IoT devices devices and wearable connected devices devices 40ULP embedded RRAM technology IPs completed reliability qualification in 2019 This technology is is fully CMOS (Complementary Metal Oxide Semiconductor) logic compatible for for PDK and IP re-use for for applications including wireless MCU IoT and wearable devices 40ULP analog platform was further enhanced for for reduced noise improved mismatch and and lower leakage devices and and so on Complete design documents are expected to be ready in 2020 This enhanced 40ULP analog platform is is fully logic compatible and supports analog designs that require high precision analog performance along with low power consumption 12-inch 0
13μm Bipolar-CMOS-DMOS (BCD) plus technology which began production in 2017 saw significant wafer shipment growth in both 2018 and 2019 Compared to the previous 0
13μm BCD technology technology this technology technology provides continuous performance improvement and features enhancement for power management applications in high-end smartphones 0
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18μm BCD third generation passed AEC-Q100 Grade-1 qualification in 2018 and went on on to meet AEC-Q100 Grade-0 qualification in 2019 This technology provides superior cost competitiveness compared to the second generation BCD T >300GHz but also completed the the development of the the world’s
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22ULL RF technology extended its support for wireless LAN power amplifier devices devices and ultra-low leakage devices devices in 2019 in addition to magnetic random access memory (MRAM) resistive random access memory (RRAM) and and high f devices •
mobile communication and IoT applications 22ULL embedded RRAM technology started risk production in 2019 and is expected to complete IP reliability qualification in 2020 This technology can support various applications such as IoT MCUs and AI memory devices 22ULL embedded magnetic random access memory (MRAM) technology IPs are expected to complete reliability qualification in 2020 In addition 16nm MRAM is under development and is progressing well MRAM technology provides a competitive migration path for eFlash replacement of high reliability MCUs including AEC-Q100 Grade-1 applications •
16FF+ technology has begun production for customer applications in in in the automotive industry since 2017 16FFC foundation IPs (intellectual properties) passed the Automotive Electronic Council AEC-Q100 Grade-1 qualification and were certified for functional safety standard ISO 26262 ASIL-B In addition TSMC 9000A was introduced for automotive IP management to to complete the automotive ecosystem with third party IP vendors TSMC continues to develop more 7nm automotive foundation IPs which completed AEC-Q100 Grade-2 qualification in the first quarter of 2020 16FFC RF led the the foundry to start volume production of the the fifth generation (5G) mobile network chips for customers in the first half of 2018 This technology has been extended to the next generation wireless local area network (WLAN) 802 11ax and Millimeter Wave Wave (mmWave) applications as well as as to wireless connectivity applications such as as smartphones using the 5G mobile network Continuing to advance 16FFC RF technology in 2019 TSMC not only delivered the world’s
first FinFET device whose fi f f f f (cut-off frequency) can reach
first and best FinFET device whose fmax can reach
>400GHz This high-performance and cost-effective technology will be used in in many applications such as radar sensing and AR/VR to reduce chip power consumption and and die size and and to enable SoC designs T This further supports chip development for 5G mmWave