Page 12 - TSMC 2019 Annual Report

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6nm FinFET (N6) technology successfully completed product yield verification in 2019 Thanks to mask layer reduction achieved through extreme ultraviolet (EUV) lithography technology technology N6 technology technology could achieve better yield and shorten production cycles compared to N7 technology in the manufacture of the same products In addition N6 technology delivers about 18% higher logic transistor density than 7nm technology This along with higher yield due to mask layer reduction can help customers get more good dies per wafer Also since its design rules are compatible with N7 technology N6 technology can can significantly reduce customers’ product design cycle time time and time-to-market Risk production of N6 technology started in the first quarter of 2020 with volume production planned before the end of 2020 mobile phones consumer electronics digital TVs and the Internet of Things (IoT) So far 12FFC+ 12FFC 12FFC 16FFC+ 16FFC and 16FF+ have received a a a a a total of more than 500 customer product tape-outs most of which have been first- time silicon successes 22nm ultra-low leakage (ULL) (22ULL) technology began volume production in 2019 to support IoT and wearable devices applications In addition 22ULL low low Vdd (low operating voltage) solutions were ready in in 2019 Compared to 40ULP and 55ULP technologies 22ULL technology offers new ULL ULL device ULL ULL SRAM (static random access memory) and and low Vdd solutions to significantly lower power consumption 22nm ULP ULP (22ULP) technology was developed based on TSMC’s industry-leading 28nm technology and started volume production in 2019 Compared to 28nm high performance compact plus (28HPC+) technology 22ULP provides 10% area reduction reduction with 10% speed gain or or 20% power reduction reduction for many applications including image processing digital TVs set- top boxes smartphones and consumer products 28HPC+ technology accumulated more than 300 customer product tape-outs by the end of 2019 28HPC+ technology provides further performance enhancement or or power reduction in in mainstream smartphone digital TV storage audio and SoC (System-on-Chip) applications Compared to 28HPC 28HPC technology technology 28HPC+ technology technology improves performance by by about about 15% or reduces leakage by by about about 50% 40nm ULP ULP (40ULP) technologies received a a total of over 100 product tape-outs by the end of 2019 These technologies support a a a a a a a variety of IoT and wearable devices applications including wireless connectivity wearable application processors and micro control units (MCUs) In addition TSMC uses
its leading 40ULP low low Vdd technology to offer low low energy consumption solutions for IoT devices and wearable connected devices devices Development of new enhanced analog devices devices is progressing well which will enrich the 40ULP platform to support customers for broader analog design needs in the future 55nm ultra-low power (55ULP) technology received a a a total of over 70 customer tape-outs by the end of 2019 Compared to to 55nm low power (55LP) technology 55ULP can can significantly increase battery life for IoT applications In addition it it integrates RF (radio frequency) and eFlash (embedded flash) to simplify customers’ SoC designs •
N7 technology is one of TSMC’s fastest technologies in volume production and provides optimized manufacturing processes for both mobile computing applications and high performance computing components N7 received a a a total of more than 100 customer product tape-outs by the end of 2019 covering a a a a wide range of applications including mobile devices game consoles artificial intelligence (AI) central processing units graphics processors and network connected devices In addition 7nm FinFET plus (N7+) technology entered full-scale production in 2019 and delivered customer products to market in high volume N7+ technology is the first commercially available EUV-enabled foundry process technology in the world Its success is a a testament to TSMC’s world-leading capabilities in in EUV volume production and paves a a a a a solid foundation for N6 and more advanced technologies 12nm FinFET compact plus technology (12FFC+) and 16nm FinFET compact plus technology (16FFC+) comprise TSMC’s latest 16nm/12nm family of of offerings following 16nm 16nm FinFET plus technology technology (16FF+) 16nm FinFET compact technology technology (16FFC) and 12nm FinFET compact technology (12FFC) 12FFC+ and 16FFC+ which entered risk production in 2019 drive product performance and power consumption to the best levels among all the foundry’s 16/14nm technologies 16FF+ is aimed at at high performance product applications including mobile devices servers graphics and cryptocurrency All 12FFC+ 12FFC 12FFC 16FFC+ and 16FFC 16FFC technologies can support customer needs in in mainstream and ultra-low power (ULP) product applications including low-end to mid-range
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