Page 13 - TSMC 2018 Annual Report

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• • • • • • 16FFC RF led the the foundry to start volume production of the the fifth generation (5G) mobile network chips for customers in the first half of 2018 This technology has been extended to the next generation Wireless Local Area Network (WLAN 802 11ax) and Millimeter Wave Wave (mmWave) applications as as as well as as as to wireless connectivity applications such as as as smartphones using the 5G mobile network As TSMC continues to advance 16FFC RF technology this more cost- effective technology will be used in more applications such as radar and and AR/VR to reduce chip power consumption and and die size 22nm RF RF (22ULP/ULL RF) technology extended its support for ultra-low leakage devices magnetic random access memory (MRAM) and and resistive random access memory (RRAM) in 2018 in addition to high fT (cut-off frequency) devices This further supports chip development for 5G mmWave mobile communication and IoT applications 28nm RF RF (28HPC+ RF) technology delivered the foundry’s first RF process design kit (PDK) in in 2018 providing support for 110GHz mmWave and and 150°C automotive grade and and so on for 5G mmWave RF and automotive radar product designs 40nm ULP eFlash began volume production in 2016 for applications such as wireless MCU (Microcontroller Unit) IoT devices devices wearable devices devices and high performance MCU In 2018 this technology passed AEC-Q100 automotive Grade-1 qualification in 2018 for both high-speed and low-power IPs 40nm ULP embedded resistive random access memory (RRAM) technology which began risk production at the end
of 2017 completed consumer grade qualification test for 10
000 cycles of endurance in 2018 This technology is is fully CMOS (Complementary Metal Oxide Semiconductor) logic compatible for for PDK and IP re-use for for applications including wireless MCU IoT and wearable devices 22nm ULL magnetic random access memory (MRAM) technology progressed well demonstrated reflow capability and passed JEDEC 168 hours high-temperature operating life (HTOL) reliability validation at at the end
of 2018 Through IP customization MRAMs can serve various applications such as artificial intelligence and eFlash replacement for MCU • • • • • • 12-inch 0
13μm BCD (Bipolar-CMOS-DMOS) Plus technology which began production in the second half of 2017 saw remarkable wafer shipment growth in 2018 Compared to the prior 0
13μm BCD technology technology this technology technology provides superior performance competitiveness and cost effectiveness for power management applications in high-end smartphones 0
18μm BCD third generation which started volume production in the second half of 2017 passed AEC-Q100 Grade-1 qualification in 2018 and is expected to pass AEC-Q100 Grade-0 qualification in 2019 This technology provides superior cost competitiveness compared to the second generation BCD GaN on on on silicon technology which began volume production in 2017 saw remarkable wafer shipment growth in 2018 TSMC continues to develop new GaN GaN technologies including GaN GaN IC with driver integration automotive grade GaN GaN and GaN GaN RF power amplifier to to support customers’ diverse system chip designs for various market applications Setting the the trend for the the smartphone organic light emitting diode (OLED) panel development TSMC launched a a a world- leading 40nm high-voltage (HV) technology technology This technology technology provides world-leading logic and SRAM density for customers to design more competitive OLED drivers As near infrared (NIR) technology is is critical to machine vision TSMC focused on improving its CMOS image sensor (CIS) NIR QE (quantum efficiency) to >35% This breakthrough greatly reduces total system power consumption and increases sensor sensitivity enabling more innovative applications of machine vision in in smartphones automotive industrial and home devices TSMC successfully delivered the world’s first CMOS-MEMS (Micro-electromechanical Systems) monolithic capacitive barometer which features sensitivity to altitude changes as small as 5 cm and fits in a a a a a a a package of slightly less than 1 mm2 for various system applications including personal activity tracking and indoor navigation